progress capability
Process Capability | ||
No. | Items | Process Capability |
1 | Grinding and Wafer saw Diameter | 4、5、6、8、12 inch |
2 | Min. Grinding Thickness |
Min=50μm (8 inch ,12 inch ) |
3 | Min. Saw Street Width |
Min=50μm |
4 | Min. Die bonding chip size |
Min=250*250μm |
5 | Die Attach | INK、MAPPING |
6 | Die Bonding Method | Epoxy/Electrically insulating/Solder/DAF/WBC |
7 | Wire Bonding Method | Gold wire, Copper wire, Alloy wire、Aluminum wire |
8 | Au Wire Min. BPP (Bond Pad Pitch) | 43 μm |
9 | Au Wire Min. BPO (Bond Pad Opening) | 36 μm ×36 μm |
10 | Cu Wire Min. BPP (Bond Pad Pitch) | 50 μm |
11 | Cu Wire Min. BPO (Bond Pad Opening) | 40 μm ×40 μm |
12 | Al Wire Min. BPP (Bond Pad Pitch) | 70 μm |
13 | Al Wire Min. BPO (Bond Pad Opening) | 250μm×385μm |
14 | Bonding Wire diameter | 18μm ~ 50μm |
15 | Bonding Wire length | 0.1mm~6mm |
16 | Molding Method | Single Mold, MGP Mold, automatic mold |
17 | Plating Method | Pure Tin Plating |
18 | Marking Method | Laser printing |
19 | Forming and Singulation | incision, pressing |
20 | Testing | We can provide testing solution upon customer’s request |
21 | Lead Co-planarity | <3mil 小于75 um |
22 | Packaging Method | Tube, Tray, Tape & Reel |
23 | Bond pad metal for Au |
Min=Al 0.4μm |
24 | Bond pad metal for Cu |
Min=Al 0.8μm or AlCu & AlSiCu 0.6μm |